bc847b / bc847c transistors 1/1 npn general purpose transistor bc847b / bc847c ! ! ! ! features 1) bv ceo < 45v (i c = 1ma) 2) complements the bc857b. ! ! ! ! package, marking, and packaging specifications bc847c sst3 g1g t116 3000 bc847b sst3 g1f t116 3000 part no. packaging type marking code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) rohm : sst3 (1) emitter (2) base (3) collector 0~0.1 0.2min. 2.4 0.2 1.3 0.95 0.45 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) all terminals have the same dimensions ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c tj tstg limits 50 45 6 0.1 0.35 150 ? 55~ + 150 unit v v v a ? p c 0.2 w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? when mounted on a 7 5 0.6mm ceramic board. ! ! ! ! electrical characteristics (ta=25 c) parameter min. typ. max. unit conditions 50 45 6 ? ? ? ? ? ? ? ? ? ? 15 5 v v v a na i c = 50 a i c = 1ma i e = 50 a v cb = 30v v cb = 30v, ta = 150 c ? 0.58 ? 0.77 v ?? 0.6 i c /i b = 100ma/5ma ?? 0.25 v i c /i b = 10ma/0.5ma v ce /i c = 5v/10ma v ce /i c = 5v/2ma bc847b 200 450 ? ? v ce /i c = 5v/2ma bc847c 420 800 ? ? ? 200 3 ? ? mhz pf v ce = 5v, i e =? 20ma, f = 100mhz v cb =? 10v, i e = 0, f = 1mhz symbol bv cbo bv ceo bv ebo i cbo v be(on) v ce(sat) h fe f t cob cib ? 8 ? pf v eb = 0.5v, i c = 0, f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current base-emitter saturation voltage collector-emitter saturation voltage dc current transfer ratio transition frequency collector output capacitance emitter input capacitance ! ! ! ! electrical characteristic curves the electrical characteristic curves for these products are the same as those of umt222a, sst222a, mmst2222a and pn2222a.
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